Oxygen vacancy and Mn2+induced ferromagnetism in Mn-doped ZnO thin films

被引：0

作者：

GUAN SuJun ^{[1
]}

NASU Naho ^{[1
]}

ZHANG Yu ^{[2
]}

TAMAMOTO Yuri ^{[1
]}

YAMANOBE Maria ^{[1
]}

ZHAO XinWei ^{[1
,3
]}

机构：

[1] Department of Physics, Tokyo University of Science

[2] Department of Robotics, The Open University of Guangdong

[3] Department of Materials Science and Engineering, Xihua University

来源：

Science China Technological Sciences | 2019年 / 10期

关键词：

oxygen vacancy; Mn2+; ZnO; thin films; ferromagnetism;

D O I：

暂无

中图分类号：

TN304.055 [];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

With the purpose of investigating the origin of ferromagnetism(FM), Mn-doped Zn O thin films had been fabricated by radio frequency(rf) magnetron sputtering and subsequent anneal process. The characterization of the Mn-doped Zn O thin films was conducted by X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS), and superconducting quantum interference device(SQUID). With increasing the anneal temperature from 300°C to 700°C for 3 min, the influence on magnetism of the Mndoped ZnO thin films is slight. While extending the anneal time from 3 to 50 min at 300°C, the influence on magnetism is obvious and the Mn-doped ZnO thin films with 30 min clearly demonstrate FM. Compared with the effect of oxygen vacancy and substitutional Mnon the ferromagnetic behavior, OVplays the main role in inducing FM of the Mn-doped ZnO thin films with good crystal structure.

引用

页码：1755 / 1759

页数：5

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