Hysteresis reversion in graphene field-effect transistors

被引：78

作者：

Liao, Zhi-Min ^{[1
]}

Han, Bing-Hong ^{[1
]}

Zhou, Yang-Bo ^{[1
]}

Yu, Da-Peng ^{[1
]}

机构：

[1] Peking Univ, Dept Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

来源：

JOURNAL OF CHEMICAL PHYSICS | 2010年 / 133卷 / 04期

关键词：

OXIDE SHEETS; VAPOR;

D O I：

10.1063/1.3460798

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

To enhance performances of graphene/SiO2 based field-effect transistors (FETs), understanding of the transfer of carriers through the graphene/SiO2 interface is crucial. In this paper, we have studied the temperature dependent transfer characters of graphene FETs. Hysteresis loop is shown to be dominated by trapping/detrapping carriers through the graphene/SiO2 interface. (C) 2010 American Institute of Physics. [doi:10.1063/1.3460798]

引用

页数：4

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