Enhanced performance of ultra-thin Cu(In,Ga)Se2 solar cells deposited at low process temperature

被引：37

作者：

Yin, G. ^{[1
]}

Brackmann, V. ^{[2
]}

Hoffmann, V. ^{[2
]}

Schmid, M. ^{[1
,3
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie, Nanoopt Concepts PV, D-14109 Berlin, Germany

[2] IFW Dresden, Inst Komplexe Mat, D-270116 Dresden, Germany

[3] Free Univ Berlin, Dept Phys, D-14195 Berlin, Germany

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2015年 / 132卷

关键词：

CIGSe; Low process temperature; Ultra-thin; Back Ga grading; FILMS; THICKNESS;

D O I：

10.1016/j.solmat.2014.08.045

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

To investigate the process temperature on the growth of ultra-thin (<= 500 nm) Cu(In,Ga)Se-2 (CIGSe) absorbers and the corresponding performance of solar cells, the process temperature was set to 610 degrees C and 440 degrees C respectively. It was found that the low process temperature (440 degrees C) could reduce the inter-diffusion of Ga-In and thus result in a higher back [Ga]/([Ga]-[In]) ([Ga]/[III]) grading than at the temperature of 610 degrees C. The higher back [Ga]/[III] grading at 440 degrees C was evidenced to both electrically and Optically contribute to the efficiency enhancement of the solar cells in contrast to the lower back [Ga]/[III] grading at 610 degrees C It was also implied that the high back [Ga]/[III] grading was beneficial to the collection of carriers generated from the back-reflected light. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：142 / 147

页数：6

共 50 条

[21] Growth and properties of epitaxial Cu(In, Ga)Se2 thin films deposited by the three-stage process for solar cells
Yamagami, Takeru
Ando, Yuta
Khatri, Ishwor
Sugiyama, Mutsumi
Nakada, Tokio
2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2017, : 192 - 194
[22] The effect of high growth temperature on Cu(In,Ga)Se2 thin film solar cells
Salome, P. M. P.
Hultqvist, A.
Fjallstrom, V.
Vermang, B.
Edoff, M.
Aitken, B.
Zhang, K.
Fuller, K.
Williams, C. Kosik
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2014, 123 : 166 - 170
[23] Impact of Band-gap Gradient in Semi-Transparent and Bifacial Ultra-Thin Cu(In,Ga)Se2 Solar Cells
Rath, Christoph
Gao, Yao
Koehler, Tristan
Schmid, Martina
ADVANCED MATERIALS INTERFACES, 2024, 11 (13)
[24] Innovative and industrially viable approach to fabricate AlOx rear passivated ultra-thin Cu(In, Ga)Se2 (CIGS) solar cells
Birant, Gizem
de Wild, J.
Kohl, T.
Buldu, D. G.
Brammertz, G.
Meuris, M.
Poortmans, J.
Vermang, B.
SOLAR ENERGY, 2020, 207 : 1002 - 1008
[25] Fabrication methods for performance improvement of Cu(In, Ga) Se2 thin film solar cells
Choi, P. H.
Baek, D. H.
Kim, H. J.
Kim, K. S.
Park, H. S.
Kim, S. S.
Choi, B. D.
ELECTRONICS LETTERS, 2013, 49 (24) : 1561 - +
[26] Efficiency enhancement of ultra-thin Cu(In,Ga)Se2 solar cells: optimizing the absorber bandgap profile by numerical device simulations
Zheng, Xue
Li, Weimin
Aberle, Armin G.
Venkataraj, Selvaraj
CURRENT APPLIED PHYSICS, 2016, 16 (10) : 1334 - 1341
[27] Influence of Na on Cu(In,Ga)Se2 solar cells grown on polyimide substrates at low temperature: Impact on the Cu(In,Ga)Se2/Mo interface
Caballero, R.
Kaufmann, C. A.
Eisenbarth, T.
Grimm, A.
Lauermann, I.
Unold, T.
Klenk, R.
Schock, H. W.
APPLIED PHYSICS LETTERS, 2010, 96 (09)
[28] Influence of heating temperature of Se effusion cell on Cu(In, Ga)Se2 thin films and solar cells
Zhang, C.
Zhu, H.
Liang, X.
Zhou, D.
Guo, Y.
Niu, X.
Li, Z.
Chen, J.
Mai, Y.
VACUUM, 2017, 141 : 89 - 96
[29] Impact of nonuniformities on thin Cu(In,Ga)Se2 solar cell performance
Kanevce, Ana
Sites, James R.
THIN-FILM COMPOUND SEMICONDUCTOR PHOTOVOLTAICS - 2007, 2007, 1012 : 293 - 298
[30] Rapid growth of thin Cu(In,Ga)Se2 layers for solar cells
Lundberg, O
Bodegård, M
Stolt, L
THIN SOLID FILMS, 2003, 431 : 26 - 30

← 1 2 3 4 5 →