Effect of Gate Oxide Defects on Tunnel Transistor RF Performance

被引：0
|
作者：
Hellenbrand, M. [1 ]
Memisevic, E. [1 ]
Svensson, J. [1 ]
Krishnaraja, A. [1 ]
Lind, E. [1 ]
Wernersson, L. -E. [1 ]
机构：
[1] Lund Univ, Dept Elect & Informat Technol, Ole Romers Vag 3, S-22363 Lund, Sweden
来源：
2018 76TH DEVICE RESEARCH CONFERENCE (DRC) | 2018年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页数：2
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