Tradeoff between speed and static power dissipation of ultra-thin body SOI MOSFETs

被引：0
|
作者：
Tian Yu [1 ]
Huang Ru [1 ]
Zhang Xing [1 ]
Wang Yang-Yuan [1 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源：
CHINESE PHYSICS | 2007年 / 16卷 / 06期
关键词：
ultra-thin-body; SOI; MOSFET; simulation;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The speed performance and static power dissipation of the ultra-thin-body (UTB) MOSFETs have been comprehensively investigated, with both DC and AC behaviours considered. Source/drain extension width (Lsp) and silicon film thickness (t(si)) are two independent parameters that influence the speed and static power dissipation of UTB siliconon-insulator (SOI) MOSFETs respectively, which can result in great design flexibility. Based on the different effects of physical and geometric parameters on device characteristics, a method to alleviate the contradiction between power dissipated and speed of UTB SOI MOSFETs is proposed. The optimal design regions of t(si) and L-sp for low operating power and high performance logic applications are given, which may shed light on the design of UTB SOI MOSFETs.
引用
收藏
页码：1743 / 1747
页数：5
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