Characteristics of InAs quantum dots on GaAs/InP with different InAs coverage

被引：14
|
作者：
Wang, XQ [1 ]
Du, GT [1 ]
Jin, Z [1 ]
Li, MT [1 ]
Yin, JZ [1 ]
Li, ZT [1 ]
Liu, SY [1 ]
Yang, SR [1 ]
机构：
[1] Jilin Univ, State Key Lab Integrated Optoelect, Dept Elect Engn, Changchun 130023, Peoples R China
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 05期
关键词：
D O I：
10.1116/1.1289550
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this article, a thin tensile GaAs interlayer was used to get narrower size distribution and regular arrangement of InAs quantum dots (QDs) on InP substrate by low-pressure metalorganic chemical vapor deposition. The comparison results of thr: photoluminescence spectrum and the atomic force microscopy image show better properties after using GaAs interlayer. Also investigated were the surface behaviors of InAs QDs with different InAs coverage on GaAs/InP in order to reveal the detailed information of InAs QDs. (C) 2000 American Vacuum Society. [50734-211X(00)02205-8].
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页码：2523 / 2526
页数：4
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