Investigation on GaAs(001) surface treated by As-free high temperature surface cleaning method

被引：13
|
作者：
Isomura, N.
Tsukamoto, S. [1 ]
Iizuka, K.
Arakawa, Y.
机构：
[1] Univ Tokyo, Nanoelectron Collaborat Res Ctr, Inst Ind Sci, Tokyo 1538505, Japan
[2] Nippon Inst Technol, Dept Elect & Elect Engn, Saitama 3458501, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2007年 / 301卷
关键词：
desorption; scanning tunneling microscope; surfaces; molecular beam epitaxy; GaAs; oxides;
D O I：
10.1016/j.jcrysgro.2006.11.185
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have used in in situ scanning tunneling microscopy to study GaAs(0 0 1) surface treated by As-free high temperature surface cleaning method. The temperatures ranged from 575 to 655 degrees C and an optimum temperature of 605 degrees C was found. Its surface had x6 structure parallel to [1 1 0] direction and smooth morphology by congruent evaporation. However, many pit-like structures formed lower than 600 degrees C. On the other hand, with 610 degrees C and higher, the surface became rough, forming many grooves with {1 1 1}B and {1 1 1}A facets. At 655 degrees C, the roughness was reduced but the surface easily became milky because of rapid As desorption. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：26 / 29
页数：4
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