Investigation on GaAs(001) surface treated by As-free high temperature surface cleaning method

被引：13

作者：

Isomura, N.

Tsukamoto, S. ^{[1
]}

Iizuka, K.

Arakawa, Y.

机构：

[1] Univ Tokyo, Nanoelectron Collaborat Res Ctr, Inst Ind Sci, Tokyo 1538505, Japan

[2] Nippon Inst Technol, Dept Elect & Elect Engn, Saitama 3458501, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 301卷

关键词：

desorption; scanning tunneling microscope; surfaces; molecular beam epitaxy; GaAs; oxides;

D O I：

10.1016/j.jcrysgro.2006.11.185

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have used in in situ scanning tunneling microscopy to study GaAs(0 0 1) surface treated by As-free high temperature surface cleaning method. The temperatures ranged from 575 to 655 degrees C and an optimum temperature of 605 degrees C was found. Its surface had x6 structure parallel to [1 1 0] direction and smooth morphology by congruent evaporation. However, many pit-like structures formed lower than 600 degrees C. On the other hand, with 610 degrees C and higher, the surface became rough, forming many grooves with {1 1 1}B and {1 1 1}A facets. At 655 degrees C, the roughness was reduced but the surface easily became milky because of rapid As desorption. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：26 / 29

页数：4

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