Study of the UBM to copper interface robustness of solder bumps in flip chip packages

被引:0
|
作者
Dreybrodt, J. [1 ]
Dupraz, Y. [1 ]
机构
[1] EM Microelect Marin SA Swatch Grp, CH-2074 Marin, Switzerland
关键词
Flip chip; Bump; Shear test; Robustness; UBM delamination; TEM; RELIABILITY; DESIGN;
D O I
10.1016/j.microrel.2014.07.114
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Shear tests on SnAg solder bumps were performed with a reduced height to the surface for a high shear force on the under bump metallurgy (UBM) to redistribution layer (RDL) copper interface. By this the failure mechanism of UBM-RDL delamination after stress tests simulating several assembly reflows could be reproduced. A design of experiment was done with corner wafers at worst case conditions for topography and interface clean. TEM cross sections confirmed nano scale carbon residues in the interface when reducing the clean efficiency. This results in a mechanically weakened interface with,a present electrical contact. The shear test with reduced height is a more severe test beyond the JEDEC test to verify the bump robustness. This is important when existing bump technologies are used for flip chip package solutions with increased solder reflow requirements. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1969 / 1971
页数:3
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