Effects of N2O plasma treatment on the performance of excimer-laser-annealed polycrystalline silicon thin film transistors

被引：3
|
作者：
Fan, CL
Chen, MC
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2002年 / 41卷 / 09期
关键词：
N2O plasma; excimer-laser-annealed poly-Si TFTs; interface roughness; stability; passivation;
D O I：
10.1143/JJAP.41.5542
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effects of NO plasma treatment on the performance of excimer-laser-annealed (ELA) polycrystalline silicon thin film transistors (poly-Si TFTs) were investigated. The N2O plasma treatment was conducted following, the deposition of the low-temperature gate oxide. resulting in all Obvious improvement in the performance of the ELA poly-Si TFTs. This improvement is presumably due to the smoothed oxide/poly-Si interface. the improved gate-oxide quality. and the reduced trap states at the interface and in the poly-Si channel. resulting from the incorporation and passivation reaction of the N2O-plasma-generated nitrogen and oxygen radicals. Moreover, the NO plasma treatment also improved the quality of the ELA poly-Si TFTs under dc voltage stress.
引用
收藏
页码：5542 / 5545
页数：4
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