Electroluminescence and excitation mechanism or erbium ions in erbium-doped crystalline silicon

被引：0
|
作者：
Bresler, MS [1 ]
Gusev, OB [1 ]
Macoviichuk, MI [1 ]
Pak, PE [1 ]
Parshin, EO [1 ]
Shek, EI [1 ]
Sobolev, NA [1 ]
Yassievich, IN [1 ]
Zakharchenya, BP [1 ]
机构：
[1] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA
来源：
TENTH FEOFILOV SYMPOSIUM ON SPECTROSCOPY OF CRYSTALS ACTIVATED BY RARE-EARTH AND TRANSITIONAL-METAL IONS | 1996年 / 2706卷
关键词：
D O I：
10.1117/12.229156
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：272 / 275
页数：4
相关论文
共 50 条
  • [41] 1.54 μm electroluminescence from erbium-doped porous silicon composites for photonic applications
    Lopez, HA
    Fauchet, PM
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2000, 182 (01): : 413 - 418
  • [42] Exciton-erbium coupling and the excitation dynamics of Er3+ in erbium-doped silicon-rich silicon oxide
    Seo, SY
    Shin, JH
    APPLIED PHYSICS LETTERS, 2001, 78 (18) : 2709 - 2711
  • [43] Study of erbium-doped silicon nanocrystals in silica
    Kashtiban, R. J.
    Bangert, U.
    Crowe, I. F.
    Halsall, M.
    Harvey, A. J.
    Gass, M.
    ELECTRON MICROSCOPY AND ANALYSIS GROUP CONFERENCE 2009 (EMAG 2009), 2010, 241
  • [44] Mechanism on exciton-mediated energy transfer in erbium-doped silicon
    Lei, HB
    Yang, QQ
    Ou, HY
    Wang, QM
    OPTICAL MATERIALS, 2000, 14 (03) : 255 - 258
  • [45] Role of codopant oxygen in erbium-doped silicon
    Wan, J
    Ling, Y
    Sun, Q
    Wang, X
    PHYSICAL REVIEW B, 1998, 58 (16) : 10415 - 10420
  • [46] Defect formation and luminescence in erbium-doped silicon
    Sobolev, NA
    Emelyanov, AM
    Kudryavtsev, YA
    Kyutt, RN
    Nikolaev, YA
    Sakharov, VI
    Serenkov, IT
    Shtelmakh, KF
    PROCEEDINGS OF THE SYMPOSIUM ON CRYSTALLINE DEFECTS AND CONTAMINATION: THEIR IMPACT AND CONTROL IN DEVICE MANUFACTURING II, 1997, 97 (22): : 107 - 115
  • [47] Flashlamp pumping of erbium-doped silicon nanoclusters
    Kenyon, AJ
    Chryssou, CE
    Pitt, CW
    Iwayama, TS
    Hole, DE
    APPLIED ORGANOMETALLIC CHEMISTRY, 2001, 15 (05) : 352 - 358
  • [48] Erbium-doped silicon light emitting devices
    Chen, TD
    Agarwal, AM
    Giovane, LM
    Foresi, JS
    Liao, L
    Lim, DR
    Morse, MT
    Ouellette, EJ
    Ahn, SH
    Duan, XM
    Michel, J
    Kimerling, LC
    LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS II, 1998, 3279 : 136 - 145
  • [49] Photoluminescence of erbium-doped silicon: Temperature dependence
    Ammerlaan, CAJ
    Thao, DTX
    Gregorkiewicz, T
    Andreev, BA
    Krasil'nik, ZF
    SOLID STATE PHENOMENA, 1999, 70 : 359 - 364
  • [50] RECOMBINATION PROCESSES IN ERBIUM-DOPED MBE SILICON
    EFEOGLU, H
    EVANS, JH
    JACKMAN, TE
    HAMILTON, B
    HOUGHTON, DC
    LANGER, JM
    PEAKER, AR
    PEROVIC, D
    POOLE, I
    RAVEL, N
    HEMMENT, P
    CHAN, CW
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (02) : 236 - 242
12345