Electroluminescence and excitation mechanism or erbium ions in erbium-doped crystalline silicon

被引：0
|
作者：
Bresler, MS [1 ]
Gusev, OB [1 ]
Macoviichuk, MI [1 ]
Pak, PE [1 ]
Parshin, EO [1 ]
Shek, EI [1 ]
Sobolev, NA [1 ]
Yassievich, IN [1 ]
Zakharchenya, BP [1 ]
机构：
[1] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA
来源：
TENTH FEOFILOV SYMPOSIUM ON SPECTROSCOPY OF CRYSTALS ACTIVATED BY RARE-EARTH AND TRANSITIONAL-METAL IONS | 1996年 / 2706卷
关键词：
D O I：
10.1117/12.229156
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：272 / 275
页数：4
相关论文
共 50 条
  • [21] Photoluminescence of erbium-doped silicon: Excitation power and temperature dependence
    Thao, DTX
    Ammerlaan, CAJ
    Gregorkiewicz, T
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (03) : 1443 - 1455
  • [22] Room-temperature electroluminescence from erbium-doped amorphous hydrogenated silicon
    Gusev, OB
    Bresler, MS
    Terukov, EI
    Tsendin, KD
    Yassievich, IN
    LIGHT EMISSION FROM SILICON: PROGRESS TOWARDS SI-BASED OPTOELECTRONICS, 1999, 77 : 335 - 338
  • [23] Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide
    Shin, JH
    Seo, SY
    Kim, S
    Bishop, SG
    APPLIED PHYSICS LETTERS, 2000, 76 (15) : 1999 - 2001
  • [24] Erbium-doped silicon and porous silicon for optoelectronics
    Reed, GT
    Kewell, AK
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 40 (2-3): : 207 - 215
  • [25] Active Erbium-Doped Silicon Nanoantenna
    Yaroshenko, Vitaly
    Obramenko, Marina
    Dyatlovich, Anna
    Kustov, Pavel
    Gudovskikh, Alexander
    Goltaev, Aleksandr
    Mukhin, Ivan
    Ageev, Eduard
    Zuev, Dmitry
    LASER & PHOTONICS REVIEWS, 2023, 17 (04)
  • [26] PHOTOLUMINESCENCE MEASUREMENTS ON ERBIUM-DOPED SILICON
    DEMAATGERSDORF, I
    GREGORKIEWICZ, T
    AMMERLAAN, CAJ
    SOBOLEV, NA
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (05) : 666 - 671
  • [27] RADIATION DEFECTS IN ERBIUM-DOPED SILICON
    KARPOV, YA
    PETROV, VV
    PROSOLOVICH, VS
    TKACHEV, VD
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (08): : 974 - 975
  • [28] The photoluminescence of erbium-doped silicon monoxide
    Roberts, SW
    Parker, GJ
    Hempstead, M
    OPTICAL MATERIALS, 1996, 6 (1-2) : 99 - 102
  • [29] Luminescence of erbium-doped porous silicon
    V. P. Bondarenko
    N. N. Vorozov
    L. N. Dolgii
    A. M. Dorofeev
    N. M. Kazyuchits
    A. A. Leshok
    G. N. Troyanova
    Technical Physics Letters, 1997, 23 : 3 - 4
  • [30] Room-temperature electroluminescence from erbium-doped amorphous hydrogenated silicon
    Gusev, OB
    Bresler, MS
    Terukov, EI
    Tsendin, KD
    Yassievich, IN
    JOURNAL OF LUMINESCENCE, 1998, 80 (1-4) : 335 - 338
12345