A robust alternative for the DRAM capacitor of 50nm generation

被引：0

作者：

Lee, KH ^{[1
]}

Chung, SJ ^{[1
]}

Kim, JY ^{[1
]}

Kim, KC ^{[1
]}

Lim, JS ^{[1
]}

Cho, K ^{[1
]}

Lee, J ^{[1
]}

Chung, JH ^{[1
]}

Lim, HJ ^{[1
]}

Choi, K ^{[1
]}

Han, S ^{[1
]}

Jang, S ^{[1
]}

Nam, BY ^{[1
]}

Yoo, CY ^{[1
]}

Kim, ST ^{[1
]}

Chung, UI ^{[1
]}

Moon, JT ^{[1
]}

Ryu, BI ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Semicond R&D Div, Proc Dev Team, Yongin 449711, Gyeonggi Do, South Korea

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As a new alternative for the DRAM capacitor of 50nm generation, Ru/Insulator/TiN (RIT) capacitor with the lowest Toxeq of 0.85nm has been successfully developed for the first time. TiO2/HfO2 and Ta2O5/HfO2 double-layers were used as dielectric materials. After full integration into 512Mbits DRAM device, the RIT capacitor showed good electrical properties and thermal stability up to 550degreesC and its time-dependent-dielectric-breakdown behavior sufficiently satisfied 10-year lifetime within a DRAM operation voltage.

引用

页码：841 / 844

页数：4

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