Band discontinuities and local interface composition in BeTe/ZnSe heterostructures

被引：21
|
作者：
Nagelstrasser, M [1 ]
Droge, H [1 ]
Fischer, F [1 ]
Litz, T [1 ]
Waag, A [1 ]
Landwehr, G [1 ]
Steinruck, HP [1 ]
机构：
[1] Univ Wurzburg, MBE, D-97074 Wurzburg, Germany
来源：
JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 08期
关键词：
D O I：
10.1063/1.367231
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Using photoelectron spectroscopy, we have investigated the band alignment at the interface of pseudomorphic BeTe/ZnSe(100) heterojunctions for different interface terminations. The heterostructures of high structural quality have been produced by molecular beam epitaxy; the interface termination was adjusted by variation of the growth parameters between the growth process of ZnSe and BeTe. The valence band offset for a Zn-rich BeTe/ZnSe interface is determined to be 1.26+/-0.15 eV, for the Se-rich BeTe/ZnSe interface a value of 0.46+/-0.15 eV is obtained. Our results show that the band alignment can be modified by the interface composition even for isovalent heterostructures. (C) 1998 American Institute of Physics.
引用
收藏
页码：4253 / 4257
页数：5
相关论文
共 50 条
  • [1] LOCAL INTERFACE COMPOSITION AND BAND DISCONTINUITIES IN HETEROVALENT HETEROSTRUCTURES
    NICOLINI, R
    VANZETTI, L
    MULA, G
    BRATINA, G
    SORBA, L
    FRANCIOSI, A
    PERESSI, M
    BARONI, S
    RESTA, R
    BALDERESCHI, A
    ANGELO, JE
    GERBERICH, WW
    PHYSICAL REVIEW LETTERS, 1994, 72 (02) : 294 - 297
  • [2] Tamm interface states in ZnSe/BeTe periodic heterostructures
    A. S. Gurevich
    V. P. Kochereshko
    A. V. Platonov
    B. A. Zyakin
    A. Waag
    G. Landwehr
    Physics of the Solid State, 2005, 47 : 1964 - 1971
  • [3] Tamm interface states in ZnSe/BeTe periodic heterostructures
    Gurevich, AS
    Kochereshko, VP
    Platonov, AV
    Zyakin, BA
    Waag, A
    Landwehr, G
    PHYSICS OF THE SOLID STATE, 2005, 47 (10) : 1964 - 1971
  • [4] Observation of interface carrier states in no-common-atom heterostructures ZnSe/BeTe
    Gurevich, A. S.
    Kochereshko, V. P.
    Bleuse, J.
    Mariette, H.
    Waag, A.
    Akimoto, R.
    NANOTECHNOLOGY, 2011, 22 (36)
  • [5] Local interface composition and native stacking fault density in ZnSe/GaAs(001) heterostructures
    Colli, A
    Carlino, E
    Pelucchi, E
    Grillo, V
    Franciosi, A
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (05) : 2592 - 2602
  • [6] Local interface composition and native stacking fault density in ZnSe/GaAs(001) heterostructures
    Colli, A., 1600, American Institute of Physics Inc. (96):
  • [7] Photoelectron spectroscopy of molecular-beam epitaxially grown BeTe/ZnSe and BeTe/GaAs heterostructures
    Nagelstrasser, M
    Droge, H
    Fischer, F
    Litz, T
    Waag, A
    Landwehr, G
    Steinruck, HP
    JOURNAL OF CRYSTAL GROWTH, 1998, 184 : 173 - 177
  • [8] Interface properties and valence-band discontinuity of MnS/ZnSe heterostructures
    Wang, L
    Sivananthan, S
    Sporken, R
    Caudano, R
    PHYSICAL REVIEW B, 1996, 54 (04): : 2718 - 2722
  • [9] Interface properties and valence-band discontinuity of MnS/ZnSe heterostructures
    Wang, L.
    Sivananthan, S.
    Sporken, R.
    Caudano, R.
    Physical Review B: Condensed Matter, 54 (04):
  • [10] Acoustic, optical, and interface phonons in BeTe/ZnSe superlattices
    I. I. Reshina
    S. V. Ivanov
    V. A. Kosobukin
    S. V. Sorokin
    A. A. Toropov
    Physics of the Solid State, 2003, 45 : 1579 - 1585
12345