Band discontinuities and local interface composition in BeTe/ZnSe heterostructures

被引：21

作者：

Nagelstrasser, M ^{[1
]}

Droge, H ^{[1
]}

Fischer, F ^{[1
]}

Litz, T ^{[1
]}

Waag, A ^{[1
]}

Landwehr, G ^{[1
]}

Steinruck, HP ^{[1
]}

机构：

[1] Univ Wurzburg, MBE, D-97074 Wurzburg, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 08期

关键词：

D O I：

10.1063/1.367231

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using photoelectron spectroscopy, we have investigated the band alignment at the interface of pseudomorphic BeTe/ZnSe(100) heterojunctions for different interface terminations. The heterostructures of high structural quality have been produced by molecular beam epitaxy; the interface termination was adjusted by variation of the growth parameters between the growth process of ZnSe and BeTe. The valence band offset for a Zn-rich BeTe/ZnSe interface is determined to be 1.26+/-0.15 eV, for the Se-rich BeTe/ZnSe interface a value of 0.46+/-0.15 eV is obtained. Our results show that the band alignment can be modified by the interface composition even for isovalent heterostructures. (C) 1998 American Institute of Physics.

引用

页码：4253 / 4257

页数：5

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