Local interface composition and native stacking fault density in ZnSe/GaAs(001) heterostructures

被引：0

作者：

机构：

[1] [1,2,Colli, A.

[2] Carlino, E.

[3] 1,Pelucchi, E.

[4] Grillo, V.

[5] 1,Franciosi, A.

来源：

Colli, A. | 1600年 / American Institute of Physics Inc.卷 / 96期

关键词：

Composition - High resolution electron microscopy - Interfaces (materials) - Nucleation - Reaction kinetics - Semiconducting gallium arsenide - Semiconducting zinc compounds - Stacking faults - Surface phenomena - Synthesis (chemical) - Transmission electron microscopy;

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摘要：

Interface structure and composition in pseudomorphic ZnSe/GaAs(001) heterostructures grown using interface fabrication procedures were compared. The fabrication procedures produce epilayers with minimum stacking fault densities. A 1 nm thick intermixed region at the interface that was depleted of As and comprised of a As alloy with zincblende structure was detected. Results indicate that Ga-Se reactions at the ZnSe/GaAs interface do not necessarily leads to nucleation of high densities of stacking faults.

引用

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