Local interface composition and native stacking fault density in ZnSe/GaAs(001) heterostructures

被引：0

作者：

机构：

[1] [1,2,Colli, A.

[2] Carlino, E.

[3] 1,Pelucchi, E.

[4] Grillo, V.

[5] 1,Franciosi, A.

来源：

Colli, A. | 1600年 / American Institute of Physics Inc.卷 / 96期

关键词：

Composition - High resolution electron microscopy - Interfaces (materials) - Nucleation - Reaction kinetics - Semiconducting gallium arsenide - Semiconducting zinc compounds - Stacking faults - Surface phenomena - Synthesis (chemical) - Transmission electron microscopy;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Interface structure and composition in pseudomorphic ZnSe/GaAs(001) heterostructures grown using interface fabrication procedures were compared. The fabrication procedures produce epilayers with minimum stacking fault densities. A 1 nm thick intermixed region at the interface that was depleted of As and comprised of a As alloy with zincblende structure was detected. Results indicate that Ga-Se reactions at the ZnSe/GaAs interface do not necessarily leads to nucleation of high densities of stacking faults.

引用

共 50 条

[21] ATOMIC AND ELECTRONIC-STRUCTURE OF THE GAAS/ZNSE(001) INTERFACE
KLEY, A
NEUGEBAUER, J
PHYSICAL REVIEW B, 1994, 50 (12): : 8616 - 8628
[22] INTERFACE STRUCTURE OF ZNS/SI(001) AND COMPARISON WITH ZNSE/SI(001) AND GAAS/SI(001)
ROMANO, LT
BRINGANS, RD
ZHOU, X
KIRK, WP
PHYSICAL REVIEW B, 1995, 52 (15): : 11201 - 11205
[23] Observation of the phase inversion in photoreflectance spectra from ZnSe/GaAs(001) heterostructures
Song, JH
Sim, ED
Lee, SH
Chang, SK
APPLIED PHYSICS LETTERS, 1998, 73 (10) : 1382 - 1384
[24] INFLUENCE OF GROWTH-PARAMETERS ON THE PROPERTIES OF ZNSE-GAAS(001) HETEROSTRUCTURES
VANZETTI, L
BONANNI, A
BRATINA, G
SORBA, L
FRANCIOSI, A
LOMASCOLO, M
GRECO, D
CINGOLANI, R
JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 765 - 769
[25] ZnSe/GaAs(001) heterostructures with defected interfaces: Structural, thermodynamic, and electronic properties
Stroppa, A
Peressi, M
PHYSICAL REVIEW B, 2005, 72 (24)
[26] OPTIMIZATION OF INTERFACE PARAMETERS AND BULK PROPERTIES IN ZNSE-GAAS HETEROSTRUCTURES
BONANNI, A
VANZETTI, L
SORBA, L
FRANCIOSI, A
LOMASCOLO, M
PRETE, P
CINGOLANI, R
APPLIED PHYSICS LETTERS, 1995, 66 (09) : 1092 - 1094
[27] A detailed surface phase diagram for ZnSe MBE growth and ZnSe/GaAs(001) interface studies
Wolfframm, D
Evans, DA
Westwood, DI
Riley, J
JOURNAL OF CRYSTAL GROWTH, 2000, 216 (1-4) : 119 - 126
[28] LOW INTERFACE STATE DENSITY AT AN EPITAXIAL ZNSE EPITAXIAL GAAS INTERFACE
QIAN, QD
QIU, J
MELLOCH, MR
COOPER, JA
KOLODZIEJSKI, LA
KOBAYASHI, M
GUNSHOR, RL
APPLIED PHYSICS LETTERS, 1989, 54 (14) : 1359 - 1361
[29] LOW INTERFACE STATE DENSITY AT PSEUDOMORPHIC ZNSE EPITAXIAL GAAS INTERFACE
QIAN, QD
QIU, J
KOBAYASHI, M
GUNSHOR, RL
KOLODZIEJSKI, LA
MELLOCH, MR
COOPER, JA
GONSALVES, JM
OTSUKA, N
III-V HETEROSTRUCTURES FOR ELECTRONIC / PHOTONIC DEVICES, 1989, 145 : 423 - 428
[30] Low stacking-fault density in ZnSe epilayers directly grown on epi-ready GaAs substrates without GaAs buffer layers
Hong, SK
Kurtz, E
Chang, JH
Hanada, T
Oku, M
Yao, T
APPLIED PHYSICS LETTERS, 2001, 78 (02) : 165 - 167

← 1 2 3 4 5 →