Phosphorus gettering in multicrystalline silicon studied by neutron activation analysis

被引：44
|
作者：
Macdonald, D [1 ]
Cuevas, A [1 ]
Kinomura, A [1 ]
Nakano, Y [1 ]
机构：
[1] Australian Natl Univ, Fac Engn & Informat Technol, Dept Engn, Canberra, ACT 0200, Australia
来源：
CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年
关键词：
D O I：
10.1109/PVSC.2002.1190514
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Neutron Activation Analysis (NAA) is a powerful and sensitive technique for measuring trace amounts of impurities. In this work, we have applied NAA to the problem of identifying metallic impurities within the bulk of solar-grade cast multicrystalline silicon (mc-Si) wafers. In particular, the change in concentrations of these contaminants after phosphorus gettering is monitored, revealing a marked reduction in some metal species, but not in others.
引用
收藏
页码：285 / 288
页数：4
相关论文
共 50 条
  • [21] Gettering of transition metals in high-performance multicrystalline silicon by silicon nitride films and phosphorus diffusion
    Liu, AnYao
    Sun, Chang
    Sio, Hang Cheong
    Zhang, Xinyu
    Jin, Hao
    Macdonald, Daniel
    JOURNAL OF APPLIED PHYSICS, 2019, 125 (04)
  • [22] Saw damage gettering for improved multicrystalline silicon
    Martins, George F.
    Macdonald, Phi
    Burton, Toby
    Bonilla, Ruy S.
    Wilshaw, Peter R.
    5TH INTERNATIONAL CONFERENCE ON SILICON PHOTOVOLTAICS, SILICONPV 2015, 2015, 77 : 607 - 612
  • [23] Gettering Efficiency in Lower Cost Multicrystalline Silicon
    Loghmarti, M.
    Abd-Lefdil, M.
    Arbaoui, A.
    Hassanain, N.
    Mzerd, A.
    Muller, J. C.
    SENSOR LETTERS, 2009, 7 (05) : 856 - 860
  • [24] Iron-rich particles in heavily contaminated multicrystalline silicon wafers and their response to phosphorus gettering
    Macdonald, D.
    Phang, S. P.
    Rougieux, F. E.
    Lim, S. Y.
    Paterson, D.
    Howard, D. L.
    de Jonge, M. D.
    Ryan, C. G.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (12)
  • [25] PHOSPHORUS GETTERING AND INTRINSIC GETTERING OF NICKEL IN SILICON
    OURMAZD, A
    SCHROTER, W
    APPLIED PHYSICS LETTERS, 1984, 45 (07) : 781 - 783
  • [26] DLTS AND NEUTRON-ACTIVATION ANALYSIS APPLIED TO A COMPREHENSIVE STUDY OF GOLD GETTERING IN SILICON
    LECROSNIER, D
    RICHOU, F
    PAUGAM, J
    PELOUS, G
    SALVI, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : C125 - C125
  • [27] Internal gettering of iron in multicrystalline silicon at low temperature
    Krain, Rafael
    Herlufsen, Sandra
    Schmidt, Jan
    APPLIED PHYSICS LETTERS, 2008, 93 (15)
  • [28] Precipitated iron: A limit on gettering efficacy in multicrystalline silicon
    Fenning, D. P.
    Hofstetter, J.
    Bertoni, M. I.
    Coletti, G.
    Lai, B.
    del Canizo, C.
    Buonassisi, T.
    JOURNAL OF APPLIED PHYSICS, 2013, 113 (04)
  • [29] As-grown iron precipitates and gettering in multicrystalline silicon
    Haarahiltunen, A.
    Savin, H.
    Yli-Koski, M.
    Talvitie, H.
    Asghar, M. I.
    Sinkkonen, J.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2009, 159-60 : 248 - 252
  • [30] Sacrificial High-Temperature Phosphorus Diffusion Gettering Process for Lifetime Improvement of Multicrystalline Silicon Wafers
    Scott, Stephanie Morgan
    Hofstetter, Jasmin
    Morishige, Ashley E.
    Buonassisi, Tonio
    2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2014, : 3014 - 3016
12345