Physics based model for potential distribution and threshold voltage of gate-all-around tunnel field effect transistor (GAA-TFET)

In this paper, we propose physics based modeling for p-type surrounding gate TFET with single material gate. The surface potential is modeled from 2-D Poisson's equation using Parabolic Approximation method. From the surface potential equation threshold voltage, threshold voltage roll off, drain current and Subthreshold Swing is modeled. The simulation of the model provides the threshold of 0.4 V, threshold voltage roll off less than 0.1 and Subthreshold Swing of 41 mV/dec. The model is validated using ATLAS TCAD Simulation Tool. (C) 2019 Elsevier Ltd. All rights reserved. Selection and Peer-review under responsibility of the scientific committee of the 2nd International Conference on Nanoscience and Nanotechnology.