Ge-on-Si camera for NIR detection

被引：0
|
作者：
Oehme, Michael [1 ]
Kaschel, Mathias [2 ]
Wanitzek, Maurice [1 ]
Epple, Steffen [2 ]
Zhou, Xin [1 ]
Yu, Zili [2 ]
Schwarz, Daniel [1 ]
Burghartz, Joachim N. [2 ]
Schulze, Joerg [1 ]
机构：
[1] Univ Stuttgart, Inst Semicond Engn, Pfaffenwaldring 47, D-70569 Stuttgart, Germany
[2] Inst Mikroelektron Stuttgart IMS CHIPS, Allmandring 30a, D-70569 Stuttgart, Germany
来源：
2021 IEEE 17TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP 2021) | 2021年
关键词：
Detectors; Germanium; Infrared sensors; Silicon; Silicon photonics;
D O I：
10.1109/GFP51802.2021.9673939
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Ge-on-Si camera for NIR detection with backside illumination, is presented. A 10x10 pixel array is controlled with a readout chip and a microcontroller, which is connected via USB. A linear behavior between digital output and optical power over a large dynamic range is shown.
引用
收藏
页数：2
相关论文
共 50 条
  • [41] Ge-on-Si for Si-based integrated materials and photonic devices
    Hu W.
    Cheng B.
    Xue C.
    Su S.
    Xue H.
    Zuo Y.
    Wang Q.
    Frontiers of Optoelectronics, 2012, 5 (1) : 41 - 50
  • [42] Ge-on-Si based mid-infrared plasmonics
    Frigerio, Jacopo
    Baldassarre, Leonetta
    Pellegrini, Giovanni
    Fischer, Marco P.
    Gallacher, Kevin
    Millar, Ross
    Ballabio, Andrea
    Brida, Daniele
    Isella, Giovanni
    Napolitani, Enrico
    Paul, Douglas J.
    Ortolani, Michele
    Biagioni, Paolo
    SILICON PHOTONICS XVI, 2021, 11691
  • [43] Heterostructure modeling considerations for Ge-on-Si waveguide photodetectors
    Andrea Palmieri
    Marco Vallone
    Marco Calciati
    Alberto Tibaldi
    Francesco Bertazzi
    Giovanni Ghione
    Michele Goano
    Optical and Quantum Electronics, 2018, 50
  • [44] A Ge-on-Si Laser for Electronic-Photonic Integration
    Sun, Xiaochen
    Liu, Jifeng
    Kimerling, Lionel C.
    Michel, Jurgen
    2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5, 2009, : 1623 - 1624
  • [45] Ge-on-Si photodiode with black silicon boosted responsivity
    Steglich, M.
    Oehme, M.
    Kaesebier, T.
    Zilk, M.
    Kostecki, K.
    Kley, E. -B.
    Schulze, J.
    Tuennermann, A.
    APPLIED PHYSICS LETTERS, 2015, 107 (05)
  • [46] Heterostructure modeling considerations for Ge-on-Si waveguide photodetectors
    Palmieri, Andrea
    Vallone, Marco
    Calciati, Marco
    Tibaldi, Alberto
    Bertazzi, Francesco
    Ghione, Giovanni
    Goano, Michele
    OPTICAL AND QUANTUM ELECTRONICS, 2018, 50 (02)
  • [47] Phase separation of Ni germanide formed on a Ge-on-Si structure for ge MOSFETs
    Zhang, Ying-Ying
    Oh, Jungwoo
    Bae, Tae-Sung
    Zhong, Zhun
    Li, Shi-Guang
    Jung, Soon-Yen
    Park, Kee-Young
    Lee, Ga-Won
    Wang, Jin-Suk
    Majhi, Prashant
    Lee, Byoung-Hun
    Tseng, Hsing-Huang
    Jeong, Yoon-Ha
    Lee, Hi-Deok
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2008, 11 (01) : H1 - H3
  • [48] Characterization of deep levels in GaInP on Ge and Ge-on-Si substrates by photoluminescence and cathodoluminescence
    Yang, Changjae
    Lee, Sangsoo
    Shin, Keun-Wook
    Oh, Sewoung
    Moon, Daeyoung
    Kim, Sung-Dae
    Kim, Young-Woon
    Kim, Chang-Zoo
    Park, Won-kyu
    Choi, Won Jun
    Park, Jinsub
    Yoon, Euijoon
    JOURNAL OF CRYSTAL GROWTH, 2013, 370 : 168 - 172
  • [49] GROWTH-MECHANISM AND CLUSTERING PHENOMENA - THE GE-ON-SI SYSTEM
    ZINKEALLMANG, M
    FELDMAN, LC
    NAKAHARA, S
    DAVIDSON, BA
    PHYSICAL REVIEW B, 1989, 39 (11): : 7848 - 7851
  • [50] Evolution of GeSi islands in epitaxial Ge-on-Si during annealing
    Zhu, Ying
    Zhang, Yiwen
    Li, Bowen
    Xia, Guangrui
    Wen, Rui-Tao
    APPLIED SURFACE SCIENCE, 2024, 659
12345