Ge-on-Si camera for NIR detection

被引：0

作者：

Oehme, Michael ^{[1
]}

Kaschel, Mathias ^{[2
]}

Wanitzek, Maurice ^{[1
]}

Epple, Steffen ^{[2
]}

Zhou, Xin ^{[1
]}

Yu, Zili ^{[2
]}

Schwarz, Daniel ^{[1
]}

Burghartz, Joachim N. ^{[2
]}

Schulze, Joerg ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Semicond Engn, Pfaffenwaldring 47, D-70569 Stuttgart, Germany

[2] Inst Mikroelektron Stuttgart IMS CHIPS, Allmandring 30a, D-70569 Stuttgart, Germany

来源：

2021 IEEE 17TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP 2021) | 2021年

关键词：

Detectors; Germanium; Infrared sensors; Silicon; Silicon photonics;

D O I：

10.1109/GFP51802.2021.9673939

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A Ge-on-Si camera for NIR detection with backside illumination, is presented. A 10x10 pixel array is controlled with a readout chip and a microcontroller, which is connected via USB. A linear behavior between digital output and optical power over a large dynamic range is shown.

引用

页数：2

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