Real time spectroscopic ellipsometric analysis of Ge film growth on Si(001) substrates

被引：7
|
作者：
Palange, E [1 ]
Di Gaspare, L
Evangelisti, E
机构：
[1] Univ Aquila, Dipartimento Energet, I-67040 Monteluco, AQ, Italy
[2] Univ Aquila, Unita INFM, I-67040 Monteluco, AQ, Italy
[3] Univ Roma TRE, Dipartimento Fis, I-00146 Rome, Italy
[4] Univ Roma TRE, Unita INFM, I-00146 Rome, Italy
来源：
THIN SOLID FILMS | 2003年 / 428卷 / 1-2期
关键词：
j.167; j.123; j.175; j.430; j.124;
D O I：
10.1016/S0040-6090(02)01168-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The early stage of the growth of Ge planar films on a Si(001) surface is investigated in real-time by using the spectroscopic ellipsometric technique. We demonstrate the possibility to measure the deposition rate and follow its evolution during the growth. The use of spectroscopic ellipsometry in combination with atomic force microscopy and X-ray photoelectron spectroscopy demonstrates that the deposition rate evolution is related to the stress status of the growing film through the variation of its complex dielectric constant. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：160 / 164
页数：5
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