Investigation of photoluminescence dynamics in InGaN/GaN multiple quantum wells

被引：6
|
作者：
Lin, Tao [1 ,2 ]
Qiu, Zhi Ren [3 ,4 ]
Yang, Jer-Ren [5 ]
Ding, Long Wei [6 ]
Gao, Yi Hua [6 ]
Feng, Zhe Chuan [1 ,2 ]
机构：
[1] Guangxi Univ, Lab Optoelect Mat & Detect Technol, GXU NAOC Ctr Astrophys & Space Sci, Sch Phys Sci & Technol, Nanning 530004, Peoples R China
[2] Guangxi Key Lab Relativist Astrophys, Nanning 530004, Peoples R China
[3] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[4] Sun Yat Sen Univ, Sch Phys & Engn, Guangzhou 510275, Guangdong, Peoples R China
[5] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10617, Taiwan
[6] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China
来源：
MATERIALS LETTERS | 2016年 / 173卷
关键词：
InGaN/GaN multiple quantum well; Luminescence; Exciton localization; Thin films; LIGHT-EMITTING-DIODES; CARRIER LOCALIZATION; LUMINESCENCE; EMISSION; EXCITONS;
D O I：
10.1016/j.matlet.2016.03.010
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper reports the transient photoluminescence properties of a typical InGaN/GaN multiple quantum well light emitting diode structure. Two decay processes were found to contribute to the photoluminescence dynamics. Based on the exciton localization model, key factors, transient lifetimes of radiative/nonradiative recombination, were obtained respectively for two decay processes by numerically fitting and separating the mixed photoluminescence efficiencies and photoluminescence decay data, which provide guidance to trace the origins of exciton localization. The origins of slow PL process and fast PL process were reasonably assigned to local compositional fluctuations of indium and thickness variation of InGaN layers, respectively. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：170 / 173
页数：4
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