Optical study of direct interface in InP/InAlAs/InP double heterostructures grown by MOCVD

被引：6
|
作者：
Hellara, J
Hassen, F
Maaref, H
Souliere, V
Monteil, Y
机构：
[1] Fac Sci Monastir, Dept Phys, Lab Phys Semicond & Composants Elect, LA MA 06, Monastir 5000, Tunisia
[2] Univ Lyon 1, LMI, F-69622 Villeurbanne, France
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 17卷 / 1-4期
关键词：
optical properties; interface; photoluminescence; MOCVD;
D O I：
10.1016/S1386-9477(02)00770-1
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A photoluminescence (PL) study of direct interface (InAlAs/InP) properties in InP/InAlAs heterostructures grown by metal-organic chemical vapor deposition on (10 0) InP substrate has been carried out. At low temperature, a broad PL band (FWHM = 120 meV) has been observed around 1 eV which is attributed to direct interface recombination. This PL line was strongly blue shifted (100 meV over three decades) when increasing the excitation density, and no saturation of the associated PL intensity was observed. This is the characteristic of type II or mixed type I-II transition. (C) 2002 Published by Elsevier Science B.V.
引用
收藏
页码：229 / 231
页数：3
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