High performance InP/InAlAs/GaAsSb/InP double heterojunction bipolar transistors

被引：23
|
作者：
Cho, S. W.
Yun, J. H.
Jun, D. H.
Song, J. I.
Adesida, I.
Pan, N.
Jang, J. H.
机构：
[1] Gwangju Inst Sci & Technol, Dept Informat & Commun, Kwangju 500712, South Korea
[2] Univ Illinois, Micro & Nanotechnol Lab, Urbana, IL 61801 USA
[3] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
[4] Microlink Devices, Niles, IL 60714 USA
来源：
SOLID-STATE ELECTRONICS | 2006年 / 50卷 / 06期
关键词：
heterojunction bipolar transistors; Spacer layer; GaAsSb; InAlAs; compound semiconductor;
D O I：
10.1016/j.sse.2006.04.015
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
DC and RF characteristics of InP/InAlAs/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) are reported. The device heterostructures include InAlAs spacer layer between InP emitter and GaAsSb base layer. The impact of thin InAlAs spacer layer was investigated by comparing the DC characteristics of large-area devices fabricated on InP/lnAlAs/GaAsSb/InP and conventional Inp/GaAsSb/InP heterostructures. By suppressing the base tunneling current and surface recombination current, the DHBTs with thin InAlAs spacer layer exhibited 5 decade lower crossover current of 7 x 10(-11) A (collector current at unity current gain) than conventional InP/GaAsSb/InP DHBT that exhibited crossover current of 4 x 10(-6) A. The current gain also improved twice by the impact of thin InAlAs layer. To investigate the high-frequency characteristics of InP/InAlAs/GaAsSb/lnP DHBTs, small-area devices employing laterally etched undercut micro-airbridges were fabricated., The unity current gain cut-off frequency, f(T), of 100 GHz was obtained from a 1 x 30 mu m(2) emitter DHBT. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码：902 / 907
页数：6
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