'Wrong bonds' in sputtered amorphous Ge2Sb2Te5

被引:72
|
作者
Jovari, P.
Kaban, I.
Steiner, J.
Beuneu, B.
Schops, A.
Webb, A.
机构
[1] Hungarian Acad Sci, Res Inst Solid State Phys & Opt, H-1525 Budapest, Hungary
[2] Tech Univ Chemnitz, Inst Phys, D-09107 Chemnitz, Germany
[3] Rhein Westfal TH Aachen, Inst Phys, D-52056 Aachen, Germany
[4] CEA Saclay, Lab Leon Brillouin, F-91191 Gif Sur Yvette, France
[5] HASYLAB Deutschen Elekt Synchroton, DESY, D-22603 Hamburg, Germany
关键词
D O I
10.1088/0953-8984/19/33/335212
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The structure of sputtered amorphous Ge2Sb2Te5 was investigated by high energy x-ray diffraction, neutron diffraction and Ge-, Sb- and Te K-edge EXAFS measurements. The five datasets were modelled simultaneously in the framework of the reverse Monte Carlo simulation technique. It was found that apart from Te-Sb and Te-Ge bonds existing in the crystalline phases, Ge Ge and Sb- Ge bonding is also significant in sputtered amorphous Ge2Sb2Te5. According to our results, all components obey the '8-N' rule.
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页数:9
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