Charge-collection and single-event upset measurements at the ISIS neutron source

被引：0
|
作者：
Platt, S. P. [1 ]
Torok, Z. [1 ]
Frost, C. D.
Ansell, S.
机构：
[1] Univ Cent Lancashire, Sch Comp Engn & Phys Sci, Preston PR1 2HE, Lancs, England
来源：
RADECS 2007: PROCEEDINGS OF THE 9TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Charge-collection measurements at the VESUVIO instrument at ISIS are described. Neutron SEU cross-sections in SRAM-based FPGAs are measured. Results are compared to equivalent data from Los Alamos Neutron Science Center.
引用
收藏
页码：322 / +
页数：2
相关论文
共 50 条
  • [41] An Adaptive Grid Scheme for Single-Event Upset Device Simulations
    Cummings, Daniel J.
    Park, Hyunwoo
    Thompson, Scott E.
    Law, Mark E.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2010, 57 (06) : 3239 - 3244
  • [42] Single-event upset analysis and protection in high speed circuits
    Hosseinabady, Mohammad
    Lotfi-Kamran, Pejman
    Di Natale, Giorgio
    Di Carlo, Stefano
    Benso, Alfredo
    Prinetto, Paolo
    ETS 2006: ELEVENTH IEEE EUROPEAN TEST SYMPOSIUM, PROCEEDINGS, 2006, : 29 - +
  • [43] Impact of NBTI Aging on the Single-Event Upset of SRAM Cells
    Bagatin, Marta
    Gerardin, Simone
    Paccagnella, Alessandro
    Faccio, Federico
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2010, 57 (06) : 3245 - 3250
  • [44] Basic mechanisms and modeling of single-event upset in digital microelectronics
    Dodd, PE
    Massengill, LW
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2003, 50 (03) : 583 - 602
  • [45] MODELING OF SINGLE-EVENT UPSET IN BIPOLAR INTEGRATED-CIRCUITS
    ZOUTENDYK, JA
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) : 4540 - 4545
  • [46] EXPERIMENTAL DETERMINATION OF SINGLE-EVENT UPSET (SEU) AS A FUNCTION OF COLLECTED CHARGE IN BIPOLAR INTEGRATED CIRCUITS.
    Zoutendyk, J.A.
    Malone, C.J.
    Smith, L.S.
    IEEE Transactions on Nuclear Science, 1984, NS-31 (06) : 1167 - 1174
  • [47] RECOVERY OF SEMICONDUCTOR AND DEFECT PROPERTIES FROM CHARGE-COLLECTION MEASUREMENTS
    DONOLATO, C
    SCANNING MICROSCOPY, 1988, 2 (02) : 801 - 811
  • [48] Application and evaluation of Chinese spallation neutron source in single-event effects testing
    Wang Xun
    Zhang Feng-Qi
    Chen Wei
    Guo Xiao-Qiang
    Ding Li-Li
    Luo Yin-Hong
    ACTA PHYSICA SINICA, 2019, 68 (05)
  • [49] Monte Carlo simulation for predicting neutron-induced single-event upset in ferroelectric random access memory
    Zhang, Hong
    Huang, Jing
    Guo, Hong Xia
    Lei, Zhi Feng
    Li, Bo
    FERROELECTRICS LETTERS SECTION, 2021, 48 (4-6) : 117 - 127
  • [50] Effect of Multiple-Transistor Charge Collection on Single-Event Transient Pulse Widths
    Ahlbin, Jonathan R.
    Gadlage, Matthew J.
    Atkinson, Nicholas M.
    Narasimham, Balaji
    Bhuva, Bharat L.
    Witulski, Arthur F.
    Holman, W. Timothy
    Eaton, Paul H.
    Massengill, Lloyd W.
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2011, 11 (03) : 401 - 406
12345