Photoluminescence Properties of ZnO Thin Films Grown by Using the Hydrothermal Technique

被引：11

作者：

Sahoo, Trilochan ^{[1
,2
]}

Jang, Lee-Woon ^{[1
,2
]}

Jeon, Ju-Won ^{[1
,2
]}

Kim, Myoung ^{[1
,2
]}

Kim, Jin-Soo ^{[1
,2
]}

Lee, In-Hwan ^{[1
,2
]}

Kwak, Joon-Seop ^{[3
]}

Lee, Jaejin ^{[4
]}

机构：

[1] Chonbuk Natl Univ, Sch Adv Mat Engn, Chonju 561756, South Korea

[2] Chonbuk Natl Univ, Res Ctr Adv Mat Dev, Chonju 561756, South Korea

[3] Sunchon Natl Univ, Dept Mat Sci & Met Engn, Chungnam 540742, South Korea

[4] Ajou Univ, Div Elect & Comp Engn, Suwon 443749, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2010年 / 56卷 / 03期

关键词：

Hydrothermal; Thin film; Photoluminescence; Bound exciton; ZnO; EPITAXIAL ZNO; GAN; EMISSION;

D O I：

10.3938/jkps.56.809

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The photoluminescence properties of zinc-oxide thin films grown by using the hydrothermal technique have been investigated. Zinc-oxide thin films with a wurtzite symmetry and c-axis orientation were grown in aqueous solution at 90 degrees C on sapphire substrates with a p-GaN buffer layer by using the hydrothermal technique. The low-temperature photoluminescence analysis revealed a sharp bound-exciton-related luminescence peak at 3.366 eV with a very narrow peak width. The temperature-dependent variations of the emission energy and of the integrated intensity were studied. The activation energy of the bound exciton complex was calculated to be 7.35 +/- 0.5 meV from the temperature dependent quenching of the integral intensities.

引用

页码：809 / 812

页数：4

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