Photoluminescence Properties of ZnO Thin Films Grown by Using the Hydrothermal Technique

被引：11
|
作者：
Sahoo, Trilochan [1 ,2 ]
Jang, Lee-Woon [1 ,2 ]
Jeon, Ju-Won [1 ,2 ]
Kim, Myoung [1 ,2 ]
Kim, Jin-Soo [1 ,2 ]
Lee, In-Hwan [1 ,2 ]
Kwak, Joon-Seop [3 ]
Lee, Jaejin [4 ]
机构：
[1] Chonbuk Natl Univ, Sch Adv Mat Engn, Chonju 561756, South Korea
[2] Chonbuk Natl Univ, Res Ctr Adv Mat Dev, Chonju 561756, South Korea
[3] Sunchon Natl Univ, Dept Mat Sci & Met Engn, Chungnam 540742, South Korea
[4] Ajou Univ, Div Elect & Comp Engn, Suwon 443749, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2010年 / 56卷 / 03期
关键词：
Hydrothermal; Thin film; Photoluminescence; Bound exciton; ZnO; EPITAXIAL ZNO; GAN; EMISSION;
D O I：
10.3938/jkps.56.809
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The photoluminescence properties of zinc-oxide thin films grown by using the hydrothermal technique have been investigated. Zinc-oxide thin films with a wurtzite symmetry and c-axis orientation were grown in aqueous solution at 90 degrees C on sapphire substrates with a p-GaN buffer layer by using the hydrothermal technique. The low-temperature photoluminescence analysis revealed a sharp bound-exciton-related luminescence peak at 3.366 eV with a very narrow peak width. The temperature-dependent variations of the emission energy and of the integrated intensity were studied. The activation energy of the bound exciton complex was calculated to be 7.35 +/- 0.5 meV from the temperature dependent quenching of the integral intensities.
引用
收藏
页码：809 / 812
页数：4
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