Growth of praseodymium oxide and silicate for high-κ dielectrics by molecular beam epitaxy

被引：2

作者：

Watahiki, Tatsuro ^{[1
]}

Tinkham, Brad P. ^{[1
]}

Jenichen, Bernd ^{[1
]}

Braun, Wolfgang ^{[1
]}

Ploog, Klaus H. ^{[1
]}

机构：

[1] Paul Drude Inst Solid State Elect, D-10117 Berlin, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 301卷 / 381-385期

关键词：

molecular beam epitaxy; rare earth compounds; dielectric materials;

D O I：

10.1016/j.jcrysgro.2006.11.094

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial growth of praseodymium oxide (Pr2O3) and praseodymium silicate on Si(001) using high-temperature effusion sources is investigated. Pr2O3 and Si are co-evaporated in order to alloy Pr2O3 with Si. The grown layers are studied by in situ reflection high-energy electron diffraction (RHEED) and in-plane grazing incidence X-ray diffraction (XRD). A reduction of an undesired interfacial layer at the Pr2O3/Si interface is achieved by adding Si during the growth. In addition, the existence of a small amount of the hexagonal phase of Pr2O3 in the layer is observed. The leakage current depends on the Si flux and the minimum leakage current is obtained for the layer that shows the highest contrast RHEED pattern with hexagonal phase fraction. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：381 / 385

页数：5

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