Growth of praseodymium oxide and silicate for high-κ dielectrics by molecular beam epitaxy

被引：2

作者：

Watahiki, Tatsuro ^{[1
]}

Tinkham, Brad P. ^{[1
]}

Jenichen, Bernd ^{[1
]}

Braun, Wolfgang ^{[1
]}

Ploog, Klaus H. ^{[1
]}

机构：

[1] Paul Drude Inst Solid State Elect, D-10117 Berlin, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 301卷 / 381-385期

关键词：

molecular beam epitaxy; rare earth compounds; dielectric materials;

D O I：

10.1016/j.jcrysgro.2006.11.094

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial growth of praseodymium oxide (Pr2O3) and praseodymium silicate on Si(001) using high-temperature effusion sources is investigated. Pr2O3 and Si are co-evaporated in order to alloy Pr2O3 with Si. The grown layers are studied by in situ reflection high-energy electron diffraction (RHEED) and in-plane grazing incidence X-ray diffraction (XRD). A reduction of an undesired interfacial layer at the Pr2O3/Si interface is achieved by adding Si during the growth. In addition, the existence of a small amount of the hexagonal phase of Pr2O3 in the layer is observed. The leakage current depends on the Si flux and the minimum leakage current is obtained for the layer that shows the highest contrast RHEED pattern with hexagonal phase fraction. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：381 / 385

页数：5

共 50 条

[1] Growth and Characterization of Alternative Gate Dielectrics by Molecular-Beam Epitaxy
Edge, L. F.
Tian, W.
Vaithyanathan, V.
Heeg, T.
Schlom, D. G.
Klenov, D. O.
Stemmer, S.
Wang, J. G.
Kim, M. J.
PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 6, 2008, 16 (05): : 213 - 227
[2] High κ gate dielectrics for si and compound semiconductors by molecular beam epitaxy
Kwo, JR
Hong, MW
CRYSTALLINE OXIDE-SILICON HETEROSTRUCTURES AND OXIDE OPTOELECTRONICS, 2003, 747 : 121 - 132
[3] High κ gate dielectrics for Si and compound semiconductors by molecular beam epitaxy
Kwo, JR
Hong, MW
NOVEL MATERIALS AND PROCESSES FOR ADVANCED CMOS, 2003, 745 : 311 - 322
[4] Molecular beam epitaxy-grown Al2O3/HfO2 high-κ dielectrics for germanium
Lee, W. C.
Chin, B. H.
Chu, L. K.
Lin, T. D.
Lee, Y. J.
Tung, L. T.
Lee, C. H.
Hong, M.
Kwo, J.
JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) : 2187 - 2190
[5] Growth of praseodymium oxide and praseodymium silicate thin films by liquid injection MOCVD
Aspinall, HC
Gaskell, J
Williams, PA
Jones, AC
Chalker, PR
Marshall, PA
Smith, LM
Critchlow, GW
CHEMICAL VAPOR DEPOSITION, 2004, 10 (02) : 83 - 89
[6] Molecular beam epitaxy grown template for subsequent atomic layer deposition of high κ dielectrics
Lee, K. Y.
Lee, W. C.
Lee, Y. J.
Huang, M. L.
Chang, C. H.
Wu, T. B.
Hong, M.
Kwo, J.
APPLIED PHYSICS LETTERS, 2006, 89 (22)
[7] Epitaxial Growth of High-κ Dielectrics for GaN MOSFETs
Jur, Jesse S.
Wheeler, Ginger D.
Veety, Matthew T.
Lichtenwalner, Daniel J.
Barlage, Douglas W.
Johnson, Mark A. L.
ADVANCES IN GAN, GAAS, SIC AND RELATED ALLOYS ON SILICON SUBSTRATES, 2008, 1068 : 63 - +
[8] Characterization of crystalline rare-earth oxide high-K dielectrics grown by molecular beam epitaxy on silicon carbide
Fissel, A.
Czernohorsky, M.
Osten, H. J.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (04): : 2115 - 2118
[9] Improved high temperature growth of GaInNAsSb by molecular beam epitaxy
Maranowski, KD
Smith, JM
Fanning, TR
Jewell, JL
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (03): : 1064 - 1067
[10] Molecular beam epitaxy and doping of AlN at high growth temperatures
Boger, R.
Fiederle, M.
Kirste, L.
Maier, M.
Wagner, J.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2006, 39 (21) : 4616 - 4620

← 1 2 3 4 5 →