Preferential growth of Si nanocrystals in SiO2/Si/SiO2 sandwich structure

被引：1
|
作者：
Du, X. W. [1 ]
Li, H. [1 ]
Lu, Y. W. [1 ]
Sun, J. [1 ]
机构：
[1] Tianjin Univ, Sch Mat Sci & Engn, Tianjin 300072, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2007年 / 305卷 / 01期
基金：
中国国家自然科学基金;
关键词：
crystallization; transmission electron microscopy; silicon;
D O I：
10.1016/j.jcrysgro.2007.04.025
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
SiO2/Si/SiO2 sandwich structure was fabricated by sputtering deposition. Many columnar {1 1 1} Si nanocrystals containing nanotwins were observed perpendicular to Si/SiO2 interface after annealing. The preferential growth of {1 1 1} Si nanocrystals can attribute to two reasons, namely the nucleation at Si/SiO2 interface and the lowest surface energy of {1 1 1} planes. The formation of nanotwins is the result of the internal stress during the growth progress of nanocrystals. (c) 2007 Elsevier B.V. All rights reserved.
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页码：59 / 62
页数：4
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