Preferential growth of Si nanocrystals in SiO2/Si/SiO2 sandwich structure

被引：1

作者：

Du, X. W. ^{[1
]}

Li, H. ^{[1
]}

Lu, Y. W. ^{[1
]}

Sun, J. ^{[1
]}

机构：

[1] Tianjin Univ, Sch Mat Sci & Engn, Tianjin 300072, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 305卷 / 01期

基金：

中国国家自然科学基金;

关键词：

crystallization; transmission electron microscopy; silicon;

D O I：

10.1016/j.jcrysgro.2007.04.025

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

SiO2/Si/SiO2 sandwich structure was fabricated by sputtering deposition. Many columnar {1 1 1} Si nanocrystals containing nanotwins were observed perpendicular to Si/SiO2 interface after annealing. The preferential growth of {1 1 1} Si nanocrystals can attribute to two reasons, namely the nucleation at Si/SiO2 interface and the lowest surface energy of {1 1 1} planes. The formation of nanotwins is the result of the internal stress during the growth progress of nanocrystals. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：59 / 62

页数：4

共 50 条

[21] Analyses of the As doping of SiO2/Si/SiO2 nanostructures
Ruffino, Francesco
Tomasello, Mario Vincenzo
Miritello, Maria
De Bastiani, Riccardo
Nicotra, Giuseppe
Spinella, Corrado
Grimaldi, Maria Grazia
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 3, 2011, 8 (03): : 863 - 866
[22] Photoluminescence from SiO2/Si/SiO2 structures
Photopoulos, P
Nassiopoulou, AG
JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (21) : 3641 - 3650
[23] Orientation dependent growth of SiC nanocrystals at the SiO2/Si interface
Battistig, G.
THIN SOLID FILMS, 2012, 520 (06) : 1973 - 1977
[24] Doping effect in Si Nanocrystals/SiO2 multilayers
Li, Dongke
Lu, Peng
Qian, Minqing
Xu, Jun
Li, Wei
Chen, Kunji
33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, 864
[25] Hydrogen passivation kinetics of Si nanocrystals in SiO2
Wilkinson, AR
Elliman, RG
OPTOELECTRONICS OF GROUP-IV-BASED MATERIALS, 2003, 770 : 81 - 86
[26] Charge spectroscopy of Si nanocrystals in a SiO2 matrix
Antonova, Irina
Neustroev, Efim
Smagulova, Svetlana
Jedrzejewski, Jedrzej
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 12, 2009, 6 (12): : 2704 - +
[27] Photoluminescence Excitation Spectroscopy of Si Nanocrystals in SiO2
de Boer, W. D. A. M.
Timmerman, D.
Roldan Gutierrez, M. A.
Molina, S. I.
Gregorkiewicz, T.
NANOSCALE LUMINESCENT MATERIALS 2, 2012, 45 (05): : 3 - 8
[28] The energy band alignment of Si nanocrystals in SiO2
Seguini, G.
Schamm-Chardon, S.
Pellegrino, P.
Perego, M.
APPLIED PHYSICS LETTERS, 2011, 99 (08)
[29] Dielectric function of Si nanocrystals embedded in SiO2
Gallas, B
Kao, CC
Defranoux, C
Fisson, S
Vuye, G
Rivory, J
THIN SOLID FILMS, 2004, 455 : 335 - 338
[30] SI/SIO2 INTERFACE STRUCTURES IN LASER-RECRYSTALLIZED SI ON SIO2
OGURA, A
AIZAKI, N
APPLIED PHYSICS LETTERS, 1989, 55 (06) : 547 - 549

← 1 2 3 4 5 →