Ensemble Monte-Carlo simulation of resistive switching in HfO2/TaN/TiN stack

被引：0
|
作者：
Permiakova, Olga [1 ]
Miakonkikh, Andrey [1 ]
Rudenko, Konstantin [1 ]
Rogozhin, Alexander [1 ]
机构：
[1] Valiev IPT RAS, Lab Microstructuring & Submicron Devices, Moscow, Russia
来源：
2020 VI INTERNATIONAL CONFERENCE ON INFORMATION TECHNOLOGY AND NANOTECHNOLOGY (IEEE ITNT-2020) | 2020年
关键词：
Monte-Carlo; forming process; resistive switching; OxRAM; EVOLUTION;
D O I：
10.1109/ITNT49337.2020.9253276
中图分类号：
TP7 [遥感技术];
学科分类号：
081102 ; 0816 ; 081602 ; 083002 ; 1404 ;
摘要：
In this paper, we present the ensemble Monte Carlo simulation of resistive switching for the Pt/HfO2/TaN/TiN structure. In simulation, we found that in oxide thickness 10 nm conductive filament formed at -4.4 V which was close to obtained experimental value -4.2 V. Detailed description of used Monte-Carlo algorithm is also presented.
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页数：4
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