Unconventional magnetoresistance in long InSb nanowires

被引：19
|
作者：
Zaitsev-Zotov, SV [1 ]
Kumzerov, YA
Firsov, YA
Monceau, P
机构：
[1] Russian Acad Sci, Inst Radio Engn & Elect, Moscow 101999, Russia
[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[3] Ctr Rech Tres Basses Temp, F-38042 Grenoble 9, France
来源：
JETP LETTERS | 2003年 / 77卷 / 03期
关键词：
D O I：
10.1134/1.1567775
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Magnetoresistance in long correlated nanowires of degenerate semiconductor InSb in asbestos matrix (wire diameter of around 5 nm, length 0.1-1 mm) is studied in the temperature range 2.3-300 K. At zero magnetic field, the electric conduction G and the current-voltage characteristics of such wires obey the power laws G proportional to T-alpha, I proportional to V-beta, expected for one-dimensional electron systems. The effect of the magnetic field corresponds to a 20% growth of the exponents alpha, beta at H = 10 T. The observed magnetoresistance is caused by the magnetic-field-induced breaking of the spin-charge separation and represents a novel mechanism of magnetoresistance. (C) 2003 MAIK "Nauka/Interperiodica".
引用
收藏
页码：135 / 139
页数：5
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