Modeling and Simulation of a SiC BJT

被引：0

作者：

Gachovska, T. K. ^{[1
]}

Du, B. ^{[5
]}

Hudgins, J. L. ^{[1
]}

Grekov, A. ^{[2
]}

Bryant, A. ^{[3
]}

Santi, E. ^{[2
]}

Mantooth, H. A. ^{[4
]}

Agarwal, A. ^{[6
]}

机构：

[1] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA

[2] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

[3] Univ Warwick, Sch Engn, Coventry CV4 7AL, W Midlands, England

[4] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA

[5] Danfoss Inc, Danfoss Dr Div, Ljubljana 61111, Slovenia

[6] Cree Inc, Durham, NC 27703 USA

来源：

2009 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION, VOLS 1-6 | 2009年

关键词：

SiC BJT; Modeling; Simulation; Fourier Series; IGBT; DIODE;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The objective of this study was to develop a physics-based model of a SiC BJT and verify its validity through experimental testing. Two physical models were considered: a lumped charge model and the Fourier series solution used to solve the ambipolar diffusion equation (ADE). These models were realized using Matlab and Simulink. The simulation and experimental results of static and switching waveforms are given.

引用

页码：487 / +

页数：2

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