Optical characterization of AlxGa1-xSb/GaSb epitaxial layers

被引：0
|
作者：
DiLernia, S [1 ]
Geddo, M [1 ]
Guizzetti, G [1 ]
Patrini, M [1 ]
Bosacchi, A [1 ]
Franchi, S [1 ]
Magnanini, R [1 ]
机构：
[1] UNIV PAVIA,DIPARTIMENTO FIS A VOLTA,INFM,I-27100 PAVIA,ITALY
来源：
DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS PROCESSING II | 1996年 / 406卷
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：389 / 394
页数：6
相关论文
共 50 条
  • [31] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF ALXGA1-XSB AND ALXGA1-XASYSB1-Y
    CAO, DS
    FANG, ZM
    STRINGFELLOW, GB
    JOURNAL OF CRYSTAL GROWTH, 1991, 113 (3-4) : 441 - 448
  • [32] NATIVE DEFECTS IN THE ALXGA1-XSB ALLOY SEMICONDUCTOR
    ICHIMURA, M
    HIGUCHI, K
    HATTORI, Y
    WADA, T
    KITAMURA, N
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (12) : 6153 - 6158
  • [33] Microscopic model of impact ionization in AlxGa1-xSb
    Grein, CH
    Ehrenreich, H
    PHOTODETECTORS: MATERIALS AND DEVICES V, 2000, 3948 : 200 - 205
  • [34] THM GROWTH OF ALXGA1-XSB BULK CRYSTALS
    BISCHOPINK, G
    BENZ, KW
    JOURNAL OF CRYSTAL GROWTH, 1993, 128 (1-4) : 470 - 474
  • [35] LATTICE-CONSTANTS IN THE ALXGA1-XSB SYSTEM
    SONOMURA, H
    NISHIMURA, T
    MIYAUCHI, T
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 61 (01): : K51 - K53
  • [36] HOLE IMPACT IONIZATION ENHANCEMENT IN ALXGA1-XSB
    JIANG, Y
    TEICH, MC
    WANG, WI
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (05) : 2488 - 2493
  • [37] IMPACT IONIZATION RATES OF HOLES IN ALXGA1-XSB
    KUWATSUKA, H
    MIKAWA, T
    MIURA, S
    YASUOKA, N
    ITO, M
    TANAHASHI, T
    WADA, O
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (04) : 2169 - 2172
  • [38] COMPOSITION DEPENDENCE OF ALXGA1-XSB ENERGY GAPS
    BEDAIR, SM
    JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 4145 - 4147
  • [39] LIQUID-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY GASB AND ALXGA1-XSB FROM SB-RICH SOLUTION
    TANAHASHI, T
    ANAYAMA, C
    KUWATSUKA, H
    NISHIYAMA, S
    ISOZUMI, S
    NAKAJIMA, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (09) : C453 - C453
  • [40] DISTRIBUTION OF ALSB IN VARIZONE LAYERS OF ALXGA1-XSB GROWING IN A TEMPERATURE-GRADIENT FIELD
    LUNIN, LS
    ASKARYAN, TA
    GAPONENKO, VN
    INORGANIC MATERIALS, 1988, 24 (01) : 116 - 117
12345