Polycrystalline CdS thin film prepared by metal organic chemical vapor deposition

Polycrystalline CdS thin film has been deposited on borosilicate glass substrate by metalorganic chemical vapor deposition using dimethyl cadmium and diethyl sulfide as source materials. The growth of CdS film occurred at substrate temperature within the range of 280-350 degrees C. The deposition rate increased with increasing VI/II molar ratio and showed the maximum value at the VI/II molar ratio of 4 for the substrate temperature of 300-350 degrees C. Thin CdS film with lower resistivity and high optical transmittance was prepared at 300 degrees C with over 1 to 4 range of VI/II molar ratio. The CdS film that deposited by MOCVD may be used as a window layer for CdS/CdTe solar cell.