Polycrystalline CdS thin film prepared by metal organic chemical vapor deposition

被引：2

作者：

Uda, H ^{[1
]}

Fujii, T ^{[1
]}

Ikegami, S ^{[1
]}

Sonomura, H ^{[1
]}

机构：

[1] Kinki Univ, Fac Sci & Technol, Osaka 577, Japan

来源：

CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997 | 1997年

关键词：

D O I：

10.1109/PVSC.1997.654143

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Polycrystalline CdS thin film has been deposited on borosilicate glass substrate by metalorganic chemical vapor deposition using dimethyl cadmium and diethyl sulfide as source materials. The growth of CdS film occurred at substrate temperature within the range of 280-350 degrees C. The deposition rate increased with increasing VI/II molar ratio and showed the maximum value at the VI/II molar ratio of 4 for the substrate temperature of 300-350 degrees C. Thin CdS film with lower resistivity and high optical transmittance was prepared at 300 degrees C with over 1 to 4 range of VI/II molar ratio. The CdS film that deposited by MOCVD may be used as a window layer for CdS/CdTe solar cell.

引用

页码：523 / 526

页数：4

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