An Effective BIST Architecture for Power-Gating Mechanisms in Low-Power SRAMs

被引:0
|
作者
Bosio, Alberto [1 ]
Dilillo, Luigi [1 ]
Girard, Patrick [1 ]
Virazel, Arnaud [1 ]
Zordan, Leonardo B. [2 ]
机构
[1] LIRMM, Montpellier, France
[2] Intel Mobile Commun, Sophia Antipolis, France
关键词
SRAM; memory test; BIST; low-power design; defect based test; test quality;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In low-power SRAMs, power-gating mechanisms are commonly used to reduce static power consumption. When the SRAM is not accessed for a long period, such mechanisms allow shutting-off one or more memory blocks (core-cell array, address decoder, I/O logic, etc), thus reducing leakage currents. In order to guarantee static power reduction in low-power SRAMs, reliable operation of power gating mechanisms must be ensured by adequate test techniques. In this paper, we present an efficient Built-In-Self -Test architecture targeting defects affecting power gating circuitry in low-power SRAMs. Experimental results show that the proposed solution improves the defect coverage and thus, it significantly increases the overall test quality compared to the state-of-the-art.
引用
收藏
页码:185 / 191
页数:7
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