Detection of terahertz radiation in a slit-grating gated field-effect transistor

被引：3
|
作者：
Aizin, G. [2 ]
Popov, V. [1 ]
Polischuk, O. [1 ]
机构：
[1] Russian Acad Sci, Saratov Branch, Inst Radioengn & Elect, Saratov 410019, Russia
[2] CUNY, Kingsborough Coll, Dept Phys Sci, Brooklyn, NY 11235 USA
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 2 | 2007年 / 4卷 / 02期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1002/pssc.200673316
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We calculate the spectra of the resonant terahertz photoresponse associated with higher-order plasmon resonances in a grating-gated field-effect transistor with two-dimensional electron channel. The dependence of the photoresponse on both the dc bias current and the grating slit width is studied. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：531 / +
页数：2
相关论文
共 50 条
  • [31] Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors
    Knap, W
    Teppe, F
    Meziani, Y
    Dyakonova, N
    Lusakowski, J
    Boeuf, F
    Skotnicki, T
    Maude, D
    Rumyantsev, S
    Shur, MS
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (04) : 675 - 677
  • [32] Application of planar antenna in field-effect transistor terahertz detectors
    Wang Xiao-Dong
    Yan Wei
    Li Zhao-feng
    Zhang Bo-wen
    Huang Zhen
    Yang Fu-hua
    [J]. CHINESE OPTICS, 2020, 13 (01): : 1 - 13
  • [33] Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor
    Knap, W
    Deng, Y
    Rumyantsev, S
    Lü, JQ
    Shur, MS
    Saylor, CA
    Brunel, LC
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (18) : 3433 - 3435
  • [34] Terahertz response of a field-effect transistor loaded with a reactive component
    Mammeri, Abdel Majid
    Mahi, Fatima Zohra
    Marinchio, Hugues
    Palermo, Cristophe
    Varani, Luca
    [J]. SOLID-STATE ELECTRONICS, 2018, 146 : 21 - 27
  • [35] Sensitivity of Field-Effect Transistor-Based Terahertz Detectors
    Javadi, Elham
    But, Dmytro B.
    Ikamas, Kestutis
    Zdanevicius, Justinas
    Knap, Wojciech
    Lisauskas, Alvydas
    [J]. SENSORS, 2021, 21 (09)
  • [36] Terahertz Digital Holography Using Field-Effect Transistor Detectors
    Zhao, Yuchen
    But, Dmytro B.
    Georges, Marc
    Knap, Wojciech
    [J]. 2019 44TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2019,
  • [37] DC Characteristics of Junction Vertical Slit Field-Effect Transistor (JVeSFET)
    Pfitzner, Andrzej
    Staniewski, Michal
    Strzyga, Michal
    [J]. MIXDES 2009: PROCEEDINGS OF THE 16TH INTERNATIONAL CONFERENCE MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2009, : 420 - 423
  • [38] Contribution to Scaling of Vertical-Slit Field-Effect Transistor (VeSFET)
    Pfitzner, Andrzej
    Kowalska, Beata
    [J]. PROCEEDINGS OF THE 23RD INTERNATIONAL CONFERENCE ON MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS (MIXDES 2016), 2016, : 321 - 325
  • [39] Realizing AND and OR Functions With Single Vertical-Slit Field-Effect Transistor
    Kamath, Aashit
    Chen, Zhixian
    Shen, Nansheng
    Singh, Navab
    Lo, G. Q.
    Kwong, Dim-Lee
    Kasprowicz, Dominik
    Pfitzner, Andrzej
    Maly, Wojciech
    [J]. IEEE ELECTRON DEVICE LETTERS, 2012, 33 (02) : 152 - 154
  • [40] BACK-GATED FIELD-EFFECT IN A DOUBLE HETEROSTRUCTURE MODULATION-DOPED FIELD-EFFECT TRANSISTOR
    PATIL, MB
    AGARWALA, S
    MORKOC, H
    [J]. ELECTRONICS LETTERS, 1988, 24 (15) : 925 - 926
12345