Oxidation of Si(001) surfaces studied by high-resolution rutherford backscattering spectroscopy

被引：1
|
作者：
Nakajima, K [1 ]
Okazaki, Y [1 ]
Kimura, K [1 ]
机构：
[1] Kyoto Univ, Dept Engn Phys & Mech, Sakyo Ku, Kyoto 6068501, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 7B期
关键词：
silicon oxidation; Si(001); high-resolution RBS; oxygen coverage; oxygen depth profile;
D O I：
10.1143/JJAP.39.4481
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The feasibility of high-resolution Rutherford backscattering spectroscopy (HRBS) to study the initial stage of Si(001) oxidation is examined. It is shown that HRBS provides oxygen depth profiling with depth resolution at an atomic level. After oxidation of Si(001) at room temperature under 2 x 10(-6) Torr oxygen partial pressure for 20 min, the coverage of oxygen was determined to be 1.2 +/- 0.3 ML.
引用
收藏
页码：4481 / 4482
页数：2
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