Analysis and Design of Dickson Charge Pump for EEPROM in 180nm CMOS technology

被引：0
|
作者：
El Alaoui, Mustapha [1 ]
Farah, Fouad [1 ]
El Khadiri, Karim [1 ]
Qjidaa, Hassan [1 ]
Aarab, Abdellah [1 ]
EL Alami, Rachid [1 ]
Lakhassassi, Ahmed [2 ]
机构：
[1] Sidi Mohamed Ben Abdellah Univ, Fac Sci, Elect Signals Syst & Comp Sci Lab LESSI, Fes, Morocco
[2] UQO, Dept Comp Sci & Engn, B-2014,Pavillon Lucien Brault, Gatineau, PQ, Canada
来源：
2018 INTERNATIONAL CONFERENCE ON INTELLIGENT SYSTEMS AND COMPUTER VISION (ISCV2018) | 2018年
关键词：
Charge Pump; Dickson charge Pump; Clock Generator; Comparator; Pre-Regulator; HIGH-VOLTAGE GENERATOR; CIRCUITS;
D O I：
暂无
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
This paper presents an analysis and design of Dickson charge pump for EEPROM in 180 nm CMOS technology. The new Dickson Charge Pump is the security sub chip to encrypts/decrypts the data, for this reason we need an EEPROM to write a secret key which must be programmed on chip by the "Dickson Charge Pump". This Dickson charge pump consists of several blocks, Pre-regulator, Dickson 6-stage, Clock generator and Comparator, it generates an output voltage V-out = 11, 25V according to a variable input voltage between 2,7V and 4,4V. The layout occupies a small active area of 32.80um x 46.90um in CMOS 180nm.
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页数：5
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