Design of 180nm CMOS linear Temperature Sensor

被引：0

作者：

Joshi, Sandeep ^{[1
]}

Jain, Pramod Kumar ^{[1
]}

机构：

[1] Sri GS Inst Technol & Sci, Elect & Instrumentat Engn Dept, Indore, MP, India

来源：

2017 INTERNATIONAL CONFERENCE ON RECENT INNOVATIONS IN SIGNAL PROCESSING AND EMBEDDED SYSTEMS (RISE) | 2017年

关键词：

CMOS TEMPERATURE SENSOR; TEMPERATURECELL; LOW POWER; NANO WATT; SUB-THRESHOLD; WEAK INVERSION; CONVERSION OF TEMPERATURE INTO VOLTAGE; INACCURACY;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

This paper presents a compact low power subthreshold based temperature sensor. The proposed temperature sensor doesn't require any bipolar transistor(BJT) and it is based on the concept that the temperature is dependent on the threshold voltage of MOSFETs. The sensor is designed using MOS transistors, which are operated in sub-threshold region. The circuit has been simulated in Cadence tool with SCL180nm library using a power supply of +/- 1.25V. The circuit linearly senses the temperaturesfrom 0 degrees C to 140 degrees C, while consumes just 197nW at1.25V power supply.

引用

页码：469 / 472

页数：4

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