Pulsed laser-enduced electrical-current joule heating for crystallization of silicon thin films

被引：0
|
作者：
Andoh, N [1 ]
Sameshima, T [1 ]
机构：
[1] Tokyo Univ Agr & Technol, Dept Technol, Tokyo 1848588, Japan
来源：
FIFTH INTERNATIONAL SYMPOSIUM ON LASER PRECISION MICROFABRICATION | 2004年 / 5662卷
关键词：
joule heating; temperature distribution; silicon; electrical circuit;
D O I：
10.1117/12.596359
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
50 nm-amorphous silicon films were crystallized by the pulsed laser-induced electrical-current joule heating method. Holes with diameter of 6 mum were formed within silicon strips, in order to control the position of the formation of crystalline gains. Large crystalline grains of 10 mum were formed between the holes in lateral direction from the observation of the photograph of the optical microscopy. Two dimensional heat flow simulation suggested that a temperature gradient was the similar to1x10(5) K/cm.
引用
收藏
页码：464 / 469
页数：6
相关论文
共 50 条
  • [41] Polycrystalline silicon thin-film transistors fabricated by Joule-heating-induced crystallization
    Hong, Won-Eui
    Ro, Jae-Sang
    SOLID-STATE ELECTRONICS, 2015, 103 : 178 - 183
  • [42] A Thermal Investigation on Joule-Heating Induced Crystallization Process of an Amorphous Silicon Thin Film
    Kim, Dong-Hyun
    Park, Seungho
    Hong, Won-Eui
    Ro, Jae-Sang
    TMNN-2010 - PROCEEDINGS OF THE INTERNATIONAL SYMPOSIUM ON THERMAL AND MATERIALS NANOSCIENCE AND NANOTECHNOLOGY, 2011,
  • [43] Arc-instability generated during the Joule heating induced crystallization of amorphous silicon films
    Hong, Won-Eui
    Ro, Jae-Sang
    THIN SOLID FILMS, 2011, 519 (07) : 2371 - 2375
  • [44] Structural, electrical and optical properties of nanocrystalline silicon thin films deposited by pulsed laser ablation
    Khan, M. A. Majeed
    Kumar, Sushil
    Ahamed, Maqusood
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 30 : 169 - 173
  • [45] Highly Controlled Crystallization of Silicon Thin Films on Low Cost Substrate by Pulsed Laser Annealing Process
    Hossain, Munem
    Siddiki, Mahbube Khoda
    Chowdhury, Masud Hasan
    2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2014, : 1279 - 1283
  • [46] Fresnoite thin films grown by pulsed laser deposition: photoluminescence and laser crystallization
    Mueller, Alexander
    Lorenz, Michael
    Brachwitz, Kerstin
    Lenzner, Joerg
    Mittwoch, Kai
    Skorupa, Wolfgang
    Grundmann, Marius
    Hoeche, Thomas
    CRYSTENGCOMM, 2011, 13 (21): : 6377 - 6385
  • [47] Laser crystallization of compensated hydrogenated amorphous silicon thin films
    Saleh, R.
    Nickel, N. H.
    Maydell, K. V.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) : 1003 - 1007
  • [48] Crystallization mechanisms in laser irradiated thin amorphous silicon films
    Mariucci, L
    Pecora, A
    Fortunato, G
    Spinella, C
    Bongiorno, C
    THIN SOLID FILMS, 2003, 427 (1-2) : 91 - 95
  • [49] Crystallization of amorphous silicon carbide thin films by laser treatment
    DeCesare, G
    LaMonica, S
    Maiello, G
    Proverbio, E
    Ferrari, A
    Dinescu, M
    Chitica, N
    Morjan, I
    Andrei, A
    SURFACE & COATINGS TECHNOLOGY, 1996, 80 (1-2): : 237 - 241
  • [50] Multicrystalline silicon thin films:: Laser crystallization conditions and properties
    Andrä, G
    Bergmann, J
    Falk, F
    Ose, E
    Sinh, ND
    SOLID STATE PHENOMENA, 1999, 67-8 : 187 - 191
12345