Pulsed laser-enduced electrical-current joule heating for crystallization of silicon thin films

50 nm-amorphous silicon films were crystallized by the pulsed laser-induced electrical-current joule heating method. Holes with diameter of 6 mum were formed within silicon strips, in order to control the position of the formation of crystalline gains. Large crystalline grains of 10 mum were formed between the holes in lateral direction from the observation of the photograph of the optical microscopy. Two dimensional heat flow simulation suggested that a temperature gradient was the similar to1x10(5) K/cm.