Monte Carlo simulation of gel formation and surface and line-edge roughness in negative tone chemically amplified resists

被引：9
|
作者：
Patsis, GP [1 ]
Glezos, N [1 ]
Gogolides, E [1 ]
机构：
[1] NCSR Demokritos, Inst Microelect, IMEL, Athens 15310, Greece
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 01期
关键词：
D O I：
10.1116/1.1542616
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A molecular-based representation of a negative tone chemically amplified resist was developed and studied using stochastic simulations. The gel formation mechanism resulting from the reaction-diffusion phenomena in the polymer matrix during the postexposure bake step, as well as the surface and line-edge roughness formation. were investigated in two dimensions. Graph theory computational techniques were employed to determine the gel cluster size and its relation to the fraction of the total number of chemically and physically cross-linked chains. Results. of the simulation include the maximum acid diffusion range, the cross-link density, the surface and line edge roughness, versus exposure dose and photoacid generator concentration. (C) 2003 American Vacuum Society.
引用
收藏
页码：254 / 266
页数：13
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