Monte Carlo simulation on line edge roughness after development in chemically amplified resist of post-optical lithography

被引：4

作者：

Saeki, Akinori ^{[1
]}

Kozawa, Takahiro ^{[1
]}

Tagawa, Seiichi ^{[1
]}

Cao, Heidi B. ^{[2
]}

Deng, Hai ^{[2
]}

Leeson, Michael J. ^{[2
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, 8-1 Mihogaoka, Osaka 5670047, Japan

[2] Intel Corp, Hillsboro, OR 97124 USA

来源：

ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXV, PTS 1 AND 2 | 2008年 / 6923卷

关键词：

line edge roughness; Monte Carlo simulation; chemically amplified resist; development process;

D O I：

10.1117/12.772174

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It is well-known that line edge roughness (LER) of patterned features in chemically amplified (CA) resists is formed in the acid generation stage and expected to be moderated by the acid diffusion and development process. To provide an insight into the limit of LER is essential for the realization of next-generation lithographies such as electron beam or extreme ultraviolet. Based on the results of Monte Carlo simulation which reproduces dynamics of chemical intermediates in positive-tone CA resist, we discuss the possibility of low LER (high frequency) after development. It is found that low LER is achievable; however, the process condition is still strict.

引用

页数：6

共 42 条

[1] Line edge roughness after development in a positive-tone chemically amplified resist of post-optical lithography investigated by Monte Carlo simulation and a dissolution model
Saeki, Akinori
Kozawa, Takahiro
Tagawa, Seiichi
Cao, Heidi B.
Deng, Hai
Leeson, Michael J.
[J]. NANOTECHNOLOGY, 2008, 19 (01)
[2] Relationship between Resolution, Line Edge Roughness, and Sensitivity in Chemically Amplified Resist of Post-Optical Lithography Revealed by Monte Carlo and Dissolution Simulations
Saeki, Akinori
Kozawa, Takahiro
Tagawa, Seiichi
[J]. APPLIED PHYSICS EXPRESS, 2009, 2 (07)
[3] Correlation between proton. dynamics and line edge roughness in chemically amplified resist for post-optical lithography
Saeki, Akinori
Kozawa, Takahiro
Tagawa, Seiichi
Cao, Heidi B.
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (06): : 3066 - 3072
[4] Line edge roughness of a latent image in post-optical lithography
Saeki, A
Kozawa, T
Tagawa, S
Cao, HB
[J]. NANOTECHNOLOGY, 2006, 17 (06) : 1543 - 1546
[5] Dependence of acid yield on acid generator in chemically amplified resist for post-optical lithography
Nakano, A
Okamoto, K
Yamamoto, Y
Kozawa, T
Tagawa, S
Kai, T
Nemoto, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (7B): : 5832 - 5835
[6] Line edge roughness in chemically amplified resist: Speculation, simulation and application
Nishimura, Y
Michaelson, TB
Meiring, JE
Stewart, MD
Willson, CG
[J]. JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2005, 18 (04) : 457 - 465
[7] Relationship between Stochastic Effect and Line Edge Roughness in Chemically Amplified Resists for Extreme Ultraviolet Lithography Studied by Monte Carlo Simulation
Kozawa, Takahiro
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (08)
[8] A study of line edge roughness in chemically amplified resist for low energy electron-beam lithography
Nakasugi, T
Ando, A
Inanami, R
Sasaki, N
Sugihara, K
[J]. MICROPROCESSES AND NANOTECHNOLOGY 2001, DIGEST OF PAPERS, 2001, : 302 - 303
[9] Line edge roughness investigation on chemically amplified resist materials with masked helium ion beam lithography
Eder-Kapl, S
Loeschner, H
Zeininger, M
Fallmann, W
Kirch, O
Patsis, GP
Constantoudis, V
Gogolides, E
[J]. MICROELECTRONIC ENGINEERING, 2004, 73-4 : 252 - 258
[10] Impact of the Parameters for a Chemically-amplified Resist on the Line-edge-roughness by Using a Molecular-scale Lithography Simulation
Kim, Sang-Kon
Oh, Hye-Keun
Jung, Young-Dae
An, Ilsin
[J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 55 (02) : 675 - 680

← 1 2 3 4 5 →