Novel microwave plasma-assisted CVD reactor for diamond delta doping

被引：47

作者：

Vikharev, A. L. ^{[1
]}

Gorbachev, A. M. ^{[1
]}

Lobaev, M. A. ^{[1
]}

Muchnikov, A. B. ^{[1
]}

Radishev, D. B. ^{[1
]}

Isaev, V. A. ^{[1
]}

Chernov, V. V. ^{[1
]}

Bogdanov, S. A. ^{[1
]}

Drozdov, M. N. ^{[2
]}

Butler, J. E. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Appl Phys, 46 Ulyanov St, Nizhnii Novgorod 603950, Russia

[2] Russian Acad Sci, Inst Phys Microstruct, GSP 105, Nizhnii Novgorod 603950, Russia

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2016年 / 10卷 / 04期

关键词：

diamond; single crystals; growth; chemical vapor deposition; reactor; boron; delta doping; secondary ion mass spectroscopy; ION MASS-SPECTROMETRY; DECONVOLUTION; INTERFACES; RESOLUTION; PROFILES; ACCOUNT;

D O I：

10.1002/pssr.201510453

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on building a novel chemical vapor deposition (CVD) reactor for diamond delta-doping. The main features of our reactor are: a) the use of rapid gas switching system, (b) the reactor design providing the laminar gas flow. These features provide the creation of ultra-sharp interfaces between doped and undoped material and minimize the prolonged "tails" formation in the doping profile. It is proved by optical emission spectroscopy that gas switching time is not more than 10 seconds. Using the novel reactor we have grown the nanometer-thin layers of boron doped diamond. The FWHM of boron concentration profile is about 2 nm which is proved by SIMS. It is shown that the both single delta-layer and multiple delta-layers could be grown using the novel CVD reactor. In principle, the reactor could be used for diamond delta doping with other dopants, like nitrogen, phosphorus etc. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：324 / 327

页数：4

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