1.3μm InAsP/InAlGaAs MQW lasers for high-temperature operation

被引：15
|
作者：
Anan, T [1 ]
Yamada, M [1 ]
Tokutome, K [1 ]
Sugou, S [1 ]
机构：
[1] NEC Corp Ltd, Optoelect Res Labs, Ibaraki, Osaka 305, Japan
来源：
ELECTRONICS LETTERS | 1997年 / 33卷 / 12期
关键词：
semiconductor junction lasers; semiconductor quantum wells;
D O I：
10.1049/el:19970671
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InAsP/InAlGaAs strained multiquantum-well (MQW) 1.3 mu m lasers with a large conduction band discontinuity are proposed and demonstrated for the first time. An InAsP/InAlGaAs MQW layer with high structural and optical quality was obtained by gas-source molecular beam epitaxy growth combined with postgrowth 650 degrees C rapid thermal annealing. The lasers exhibited a low threshold current density of 1.1kA/cm(2) with an excellent characteristic temperature as high as 116K.
引用
收藏
页码：1048 / 1049
页数：2
相关论文
共 50 条
  • [1] 1.3-μm InAsP/InAlGaAs MQW lasers for high-temperature operation
    Anan, T
    Yamada, M
    Tokutome, K
    Sugou, S
    [J]. IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MID-INFRARED II, 1998, 3284 : 172 - 180
  • [2] High-temperature characteristics of 1.3-mu m InAsP/InAlGaAs MQW lasers
    Yamada, M
    Anan, T
    Tokutome, K
    Sugou, S
    [J]. 1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1997, : 559 - 562
  • [3] High-temperature characteristics of 1.3-μm InAsP-InAlGaAs ridge waveguide laser
    Yamada, M
    Anan, T
    Tokutome, K
    Sugou, S
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (02) : 164 - 166
  • [4] 1.3-μm InAsP modulation-doped MQW lasers
    Shimizu, H
    Kumada, K
    Yamanaka, N
    Iwai, N
    Mukaihara, T
    Kasukawa, A
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2000, 36 (06) : 728 - 735
  • [5] A forbidden temperature region for the growth of planar strained InAlGaAs MQW structures for 1.3 μm lasers
    SpringThorpe, AJ
    Extavour, M
    Goodchild, D
    Griswold, EM
    Smith, G
    White, JK
    Hinzer, K
    Glew, R
    Williams, R
    Robert, F
    [J]. JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) : 760 - 765
  • [6] 1.3MU-M INASP COMPRESSIVELY STRAINED MULTIPLE-QUANTUM-WELL LASERS FOR HIGH-TEMPERATURE OPERATION
    OOHASHI, H
    HIRONO, T
    SEKI, S
    SUGIURA, H
    NAKANO, J
    YAMAMOTO, M
    TOHMORI, Y
    YOKOYAMA, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (08) : 4119 - 4121
  • [7] High-temperature and high-speed operation of 1.3μm uncooled AlGaInAs-InP MQW-DFB lasers
    Wang, DL
    Zhou, N
    Zhang, J
    Zhang, RK
    Huang, XD
    Li, LS
    Chang, J
    [J]. Optoelectronic Materials and Devices for Optical Communications, 2005, 6020 : U201 - U201
  • [8] GAIN CHARACTERISTICS OF 1.3 MU-M COMPRESSIVELY STRAINED MQW LASERS AT HIGH-TEMPERATURE
    HUANG, YD
    YAMADA, H
    SASAKI, Y
    TORIKAI, T
    UJI, T
    [J]. NEC RESEARCH & DEVELOPMENT, 1995, 36 (04): : 479 - 484
  • [9] HIGH-TEMPERATURE SINGLE-MODE OPERATION OF 1.3-MU-M STRAINED MQW GAIN-COUPLED DFB LASERS
    LU, H
    BLAAUW, C
    MAKINO, T
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (06) : 611 - 613
  • [10] High-temperature operation of 1.3μm AlGaInAs strained multiple quantum well lasers
    Takemasa, K
    Munakata, T
    Kobayashi, M
    Wada, H
    Kamijoh, T
    [J]. ELECTRONICS LETTERS, 1998, 34 (12) : 1231 - 1233
12345